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Semiconductor device simulation using generalized mobility models

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2 Author(s)
Steven E. Laux ; IBM Research Division. P.O. Box 218, Yorktown Heights, New York 1059, USA ; Robert G. Byrnes

A method for discretizing the semiconductor transport equations using generalized mobility models is developed as an extension of the Scharfetter-Gummel finite difference approach. The method is sufficiently general to be applicable to nearly arbitrary empirical mobility models (including those for MOS surface effects) and may be used on a variety of mesh types in two or three dimensions. The impact of generalized mobility models on the sparsity of our resulting discrete equations is discussed. Convergence rate of a Newton's method linearization of the nonlinear system of equations is measured and interpreted. Some computational results from a study of short-channel MOSFETs are presented to illustrate the approach.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:29 ,  Issue: 3 )