By Topic

Scanning tunneling microscopy of cleaved semiconductor surfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Feenstra, R.M. ; IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; Fein, A.P.

Scanning tunneling microscopy is used to study the surface topography of cleaved GaAs(110) and Si(111) surfaces. For GaAs we observe 1 × 1 periodicity, with an [001] corrugation amplitude of typically 0.2 Å and a [̅110] corrugation amplitude of ~0.05 Å. Surface point defects are observed, consisting typically of ∼0.7-Å-deep depressions extending along the rows. For Si(111), we find a periodicity of two unit cells, indicating the presence of the 2 × 1 reconstruction. We observe a maximum [2̅1̅1] corrugation amplitude of 0.5 Å and a [011] corrugation amplitude of <0.02 Å, consistent with the π-bonded chain model for this surface. Structural disorder on the surface most commonly appears as “protrusions” along or crossing over between the chains. Orientational disorder is observed in the tilt of the chains.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:30 ,  Issue: 5 )