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Correlated discrete transfer of single electrons in ultrasmall tunnel junctions

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1 Author(s)
Likharev, K.K. ; Department of Physics, Moscow State University, 119899 GSP, U.S.S.R

Recent theoretical and experimental studies have revealed a new family of effects taking place in very small tunnel junctions at low temperatures. The effects have a common origin, the correlated discrete tunneling of single electrons and/or Cooper pairs resulting from their electrostatic (“Coulomb”) interaction. This paper presents a brief review of the single-electron part of the family, including discussion of the background physics, methods of theoretical description of the new effects, experimental results, and possible applications of the new effects in analog and digital electronics.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:32 ,  Issue: 1 )