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High-throughput, high-resolution electron-beam lithography

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3 Author(s)
Pfeiffer, H.C. ; IBM General Technology Division, East Fishkill facility, Route 52, Hopewell Junction, New York 12533, USA ; Groves, T.R. ; Newman, T.H.

The introduction of the shaped-beam imaging technique has greatly enhanced the exposure efficiency of electron-beam lithography systems. IBM's EL systems provide the throughput needed for lithography applications in semiconductor fabrication lines. The resolution of these systems has been steadily improved over the past 15 years in support of the semiconductor lithography trend toward submicron dimensions. This paper describes the latest version (EL-3 system) capable of fabricating 0.25-µm features. The technical challenges of submicron e-beam lithography are discussed, and practical solutions together with experimental results are presented.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:32 ,  Issue: 4 )