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Electronic transport in small strongly localized structures

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3 Author(s)
A. B. Fowler ; IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; J. J. Wainer ; R. A. Webb

We review some recent results on the low-temperature transport properties (T < 4K) of very small silicon metal-oxide field-effect transistors in the insulating regime of conduction. Our devices are lithographically patterned to have widths as small as 0.05 µm and lengths as short as 0.06 µm. These small transistors exhibit new and unexpected sample-specific fluctuation behavior in the gate voltage, temperature, and magnetic field dependence of the conductance. We discuss both resonant tunneling and Mott variable-range hopping, the two main transport mechanisms in these devices at low temperature.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:32 ,  Issue: 3 )