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Mesoscopic coherence phenomena in semiconductor devices

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2 Author(s)
Kaplan, S.B. ; IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; Hartstein, A.

Semiconductor devices have several attractive properties which make them useful in the study of electronic coherence phenomena such as universal conductance fluctuations. The use of gated devices allows the Fermi level, and thus the electronic wavelength, to be adjusted in order to study energy correlation effects. The two-dimensional electron gas formed beneath the gate can be tilted with respect to the magnetic field to reveal that the field correlation length of the fluctuations obeys a cosine law. This strongly suggests that the fluctuations are caused by quantum interference in the same way that the Aharonov-Bohm effect arises in metallic rings. The energy range over which electrons are correlated in these materials is generally larger than in metals. This allows one to study these conductance fluctuations at much higher temperatures than are feasible in metallic conductors. For the same reason, substantially larger source-drain voltages can be applied to observe asymmetry and nonlinear effects in the conductance.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:32 ,  Issue: 3 )