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Interim report on the charge-transfer resonance model for the Cu-O superconductors

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1 Author(s)
Varma, C.M. ; AT&T Bell Laboratories, 800 Mountain Avenue, Murray Hill, New Jersey 07974, USA

The two-band model including intra-atomic repulsion on Cu and near-neighbor Cu-O repulsion for the high-temperature superconductors is supported by a variety of experiments and theoretical calculations as the minimum necessary. The specific mechanism for high Tc through charge-transfer resonances was proposed because the known alternative mechanisms—phonons and magnetic excitations—were believed unlikely. The case for charge-transfer-resonance-induced high Tc has, however, not yet been proven. Equally important, the various anomalies in the metallic state are not yet understood. However, calculations on the model do show a charge-transfer-gap insulating state which is antiferromagnetic at and near 1/2 filling, a metallic state for intermediate filling with effective particle-particle attraction, and a charge-transfer instability beyond a certain filling.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:33 ,  Issue: 3 )