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A submicron MOSFET parameter extraction technique

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3 Author(s)
El-Kareh, B. ; IBM General Technology Division, Essex Junction, Vermont 05452, USA ; Tonti, W.R. ; Titcomb, S.L.

A technique is introduced for measuring electron and hole mobilities as a function of temperature and normal field in inverted silicon surfaces. We also introduce a new definition of threshold voltage which allows the method to measure mobility independent of channel dimensions and resistance in series with the channel. The results are used to extract the resistance in series with the channel, the effective channel dimensions, and the intrinsic MOSFET transconductance. The technique is demonstrated on MOSFETs with channel lengths ranging from 0.25 µm to 20 µm.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:34 ,  Issue: 2.3 )