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Heterojunction FETs in III–V compounds

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3 Author(s)
Kiehl, R.A. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York, 10598, USA ; Solomon, P.M. ; Frank, D.J.

We review work on heterojunction FETs (HFETs) fabricated from III–V compounds, with emphasis on the unique properties of such devices and their applicability to high-speed logic circuits. After discussing their general properties, including their uniquely high carrier mobility and fast switching speed, we discuss HFETs investigated at the IBM Thomas J. Watson Research Center, i.e., the semiconductor-insulator-semiconductor FET (SISFET) and quantum-well metal-insulator-semiconductor FET (QW-MISFET)—and their possible circuit applications. Finally, the opportunities for achieving a circuit performance level beyond that offered by the GaAs-(Al,Ga)As materials system are explored.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:34 ,  Issue: 4 )