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Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ films

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11 Author(s)
Giess, E. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; Sandstrom, R.L. ; Gallagher, W.J. ; Gupta, A.
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Previous studies had indicated promising use of lanthanide gallate perovskite-type substrates for the deposition of epitaxial, high-Tc superconducting Ba2YCu3O7-δ (BYCO) films. They were also found to have moderate dielectric constants (∼25 compared to ∼277 for SrTiO3). This study was undertaken to further explore the use of LaGaO3, NdGaO3, SrTiO3, MgO, and Y-stabilized ZrO2 substrates, prepared from single-crystal boules grown by several suppliers using the Czochralski method. Films were prepared by cylindrical magnetron sputtering and laser ablation. Substrate evaluations included measurement of dielectric constant and loss, thermal expansion, and mechanical hardness and toughness. In addition to their moderate dielectric constants, they were found to have satisfactory mechanical properties, except for the twinning tendency of LaGaO3. Lattice mismatch strains were calculated for orthorhombic BYCO films on a number of substrates. NdGaO3 was found to have the best lattice match with BYCO, and is now available twin-free.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:34 ,  Issue: 6 )