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Analytical method for determining equivalent circuit parameters of GaAs FETs

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3 Author(s)
S. Yanagawa ; Komukai Works, Toshiba Corp., Kawasaki, Japan ; H. Ishihara ; M. Ohtomo

An analytical method has been developed that gives a simple and practical means of extracting small-signal equivalent circuit parameters (ECPs) of GaAs FETs with negligibly small bond-pad capacitances. Only the S-parameter measurement of the pinched-off cold field-effect transistor (FET) is enough to determine the extrinsic FET ECPs. The intrinsic FET ECPs of a medium-power Ku-band GaAs FET chip with a total gate width of 800 μm have been analytically extracted for two types of eight-element intrinsic FET models; Model 1 (Curtice model) and Model 2 that differ in the control voltage (VG) definition. Model 2 with VG defined across the gate-source capacitance is found more appropriate judging from the smaller frequency dependence of the ECPs and a better agreement between the calculated and measured S-parameters over 2-20 GHz

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:44 ,  Issue: 10 )