By Topic

Magnetotransport in doped manganate perovskites

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
J. Z. Sun ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; L. Krusin-Elbaum ; A. Gupta ; Gang Xiao
more authors

Recent progress in oxide perovskite thin-film technology has led to the discovery of a large negative magnetoresistance at room temperature in doped manganate perovskite thin films. These films may have potentials for magnetic sensing applications. In this paper we review the basic phenomena and physics of magnetotransport in this class of materials. We also discuss our recent demonstration of a large low-field magnetoresistance effect, and the associated challenges that lie ahead.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:42 ,  Issue: 1 )