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Magnetotransport in doped manganate perovskites

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6 Author(s)
Sun, J.Z. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; Krusin-Elbaum, L. ; Gupta, A. ; Xiao, Gang
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Recent progress in oxide perovskite thin-film technology has led to the discovery of a large negative magnetoresistance at room temperature in doped manganate perovskite thin films. These films may have potentials for magnetic sensing applications. In this paper we review the basic phenomena and physics of magnetotransport in this class of materials. We also discuss our recent demonstration of a large low-field magnetoresistance effect, and the associated challenges that lie ahead.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:42 ,  Issue: 1 )