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Sputter deposition for semiconductor manufacturing

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1 Author(s)
Rossnagel, S.M. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

Sputter deposition, also known as physical vapor deposition, or PVD, is a widely used technique for depositing thin metal layers on semiconductor wafers. These layers are used as diffusion barriers, adhesion or seed layers, primary conductors, antireflection coatings, and etch stops. With the progression toward finer topographical dimensions on wafers and increasing aspect ratios, the broad angular distribution of depositing, sputtered atoms leads to poor or nonexistent coverage in deep features. This has been partially addressed using directional sputtering techniques such as collimated sputtering or long-throw sputtering. More recently, work originating in IBM has moved toward the deposition of films from metal-rich plasmas fed by sputtering, a technique known as I-PVD (for ionized PVD). This technique, based on fairly minor modifications of existing PVD systems, solves many of the intrinsic problems of PVD and appears headed for widespread manufacturing applications.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:43 ,  Issue: 1.2 )

Date of Publication:

Jan. 1999

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