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Modeling and simulation methods for plasma processing

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1 Author(s)
Hamaguchi, S. ; Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Gokasho, Uji-shi, 611-0013, Japan

Methods used for the modeling and numerical simulation of the plasma processes used in semiconductor integrated-circuit fabrication are reviewed. In the first part of the paper, we review continuum and kinetic methods. A model based on the drift-diffusion equations is presented as an example of a continuum model; the model and associated numerical solutions are discussed. The most widely used simulation method for kinetic modeling is the Particle-In-Cell/Monte-Carlo-Collision (PIC/MCC) method, in which the plasma is modeled by a system of charged superparticles (each of which represents a collection of a large number of ions or electrons) that move in self-consistent electromagnetic fields and collide via given collision cross sections. In the second part of the paper, we review the modeling and simulation of the evolution of surface topography in plasma etching and deposition.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:43 ,  Issue: 1.2 )