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Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability

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1 Author(s)
G. Lucovsky ; Departments of Physics, Electrical and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, 27695, USA

The incorporation of nitrogen (N) atoms into ultrathin gate dielectrics 1) at monolayer levels at Si-SiO2 interfaces reduces tunneling current and defect generation; 2) in bulk nitrides, as in oxide-nitride-oxide (ONO) or oxide-nitride (ON) composite structures, allows the use of physically thicker films without reduced capacitance compared to single-layer oxides; and 3) in nitrided layers at the polycrystalline Si-dielectric interface or in ON dielectrics reduces boron (B) atom out-diffusion from heavily doped p+ polycrystalline silicon gate electrodes into oxide gate dielectrics. The results presented in this review demonstrate that N atoms can be selectively and independently incorporated into different parts of the gate dielectric by low-temperatureremote-plasma-assisted processing. When combined with low-thermal-budget rapid thermal annealing, this yields ultrathin gate dielectrics with performance and reliability which generally exceeds that of single-layer thermally grown oxides. The devices addressed in this paper include n-MOS and p-mos field-effect transistors (FETs) with oxide-equivalent thicknesses of less than 2 nm.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:43 ,  Issue: 3 )