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Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides

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3 Author(s)
Lo, S.H. ; IBM Microelectronics Division, East Fishkill facility, Hopewell Junction, New York 12533, USA ; Buchanan, D.A. ; Taur, Y.

The electrical characteristics (C-V and I-V) of n+- and p+-polysilicon-gated ultrathin-oxide capacitors and FETs were studied extensively to determine oxide thickness and to evaluate tunneling current. A quantum-mechanical model was developed to help understand finite inversion layer width, threshold voltage shift, and polysilicon gate depletion effects. It allows a consistent determination of the physical oxide thickness based on an excellent agreement between the measured and modeled C-V curves. With a chip standby power of ≤0.1 W per chip, direct tunneling current can be tolerated down to an oxide thickness of 15–20 Å. However, transconductance reduction due to polysilicon depletion and finite inversion layer width effects becomes more severe for thinner oxides. The quantum-mechanical model predicts higher threshold voltage than the classical model, and the difference increases with the electric field strength at the silicon/oxide interface.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:43 ,  Issue: 3 )