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Scaling the gate dielectric: Materials, integration, and reliability

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1 Author(s)
Buchanan, D.A. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

In this paper a review of the more “fundamental” concerns regarding the scaling of the gate dielectric in the ultrathin regime is presented. Material issues are discussed pertaining to the integration of silicon oxynitride and oxide/nitride stacked layers and how such films might reduce or minimize boron penetration problems and address leakage current and reliability concerns. A methodology is presented to calculate device and chip lifetimes for MOS structures on the basis of data extracted from voltage- and temperature-accelerated measurements. Some integration issues regarding higher-k materials are also discussed because of their ability to solve the scaling problem. However, difficulties are involved in integrating them into a CMOS process flow.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:43 ,  Issue: 3 )