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In situ transmission electron microscopy allows us to study growth processes and phase transitions which are important in semiconductor processing. It provides a unique view of dynamic reactions as they occur. In this paper we describe the use of in situ microscopy for the observation of reactions in silicides and the formation of semiconductor “quantum dots.” The dynamic information obtained from these experiments enables us to understand reaction mechanisms and to suggest improvements to growth and processing techniques. We conclude with a discussion of the use of in situ microscopy for studying reactions such as electrodeposition which occur at liquid/solid interfaces.
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