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Growth processes and phase transformations studied in situ transmission electron microscopy

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1 Author(s)
Ross, F.M. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

In situ transmission electron microscopy allows us to study growth processes and phase transitions which are important in semiconductor processing. It provides a unique view of dynamic reactions as they occur. In this paper we describe the use of in situ microscopy for the observation of reactions in silicides and the formation of semiconductor “quantum dots.” The dynamic information obtained from these experiments enables us to understand reaction mechanisms and to suggest improvements to growth and processing techniques. We conclude with a discussion of the use of in situ microscopy for studying reactions such as electrodeposition which occur at liquid/solid interfaces.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:44 ,  Issue: 4 )

Date of Publication:

July 2000

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