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Synchrotron X-ray scattering techniques for microelectronics-related materials studies

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1 Author(s)
Jordan-Sweet, J.L. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

X-ray diffraction techniques using synchrotron radiation play a vital role in the understanding of structural behavior for a wide range of materials important in microelectronics. The extremely high flux of X-rays produced by synchrotron storage rings makes it possible to probe layers and interfaces in complicated stacked structures, characterize low-atomic-weight materials such as polymers, and study in situ phase transformations, to name only a few applications. In this paper, following an introduction to synchrotron radiation, we describe the capabilities of the IBM/MIT X-ray beamlines at the National Synchrotron Light Source (NSLS), Brookhaven National Laboratory (BNL). A range of techniques are introduced, and examples of their applicability to the study of microelectronics-related materials phenomena are described.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:44 ,  Issue: 4 )

Date of Publication:

July 2000

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