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Medium-energy ion scattering for analysis of microelectronic materials

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1 Author(s)
Copel, M. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

This paper reviews the application of medium-energy ion scattering (MEIS) to the study of materials problems relevant to microelectronics fabrication and reliability. Associated physical mechanisms and techniques are described. Three examples of MEIS studies are discussed in detail: Studies of the nucleation of silicon nitride on silicon dioxide, the interfacial segregation of Cu from Al(Cu), and the structure of hydrogen-terminated silicon surfaces created by various wet etching techniques.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:44 ,  Issue: 4 )