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Chemical and physical aspects of the post-exposure baking process used for positive-tone chemically amplified resists

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4 Author(s)
Hinsberg, W.D. ; IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA ; Houle, F.A. ; Sanchez, M.I. ; Wallraff, G.M.

Chemically amplified (CA) resists are in widespread use for the fabrication of leading-edge microelectronic devices, and it is anticipated that they will see use well into the future. The refinement and optimization of these materials to allow routine imaging at dimensions that will ultimately approach the molecular scale will depend on an improved in-depth understanding of the materials and their processing. We provide here an overview of recent work in our laboratory on the chemical and physical processes that occur during post-exposure baking (PEB) of positive-tone CA resists. Our results provide a clearer understanding of how this critical step in the lithographic imaging process will affect extendibility of the CA resist concept to nanoscale feature sizes.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:45 ,  Issue: 5 )