Skip to Main Content
A prototype of a 3-V SiGe direct-conversion receiver integrated circuit for use in third-generation (3G) WCDMA mobile cellular systems has been completed. The goal of its design was to minimize current draw while meeting WCDMA receiver rf specifications with margin. The design includes a bypassable low-noise amplifier, quadrature downconverter, and first-stage variable-gain baseband amplifiers integrated on chip. The design is optimized for use with a single-ended off-chip bandpass surface-acoustic-wave filter with no external matching components. The prototype design represents a first step toward a fully integrated monolithic WCDMA/UMTS receiver system-on-a-chip. A rigorous set of performance tests are used to characterize the noise and linearity performance of the packaged IC across its full frequency band of operation. A receiver test-bed system with a software baseband demodulator is used to determine the bit-error-rate performance of the receiver integrated circuit (IC) at sensitivity. Measured results are compared with estimated system performance requirements to determine compliance with key WCDMA rf specifications.
Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.