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Foundation of rf CMOS and SiGe BiCMOS technologies

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22 Author(s)
J. S. Dunn ; IBM Microelectronics Division, Burlington facility, 1000 River Road, Essex Junction, Vermont 05452, USA ; D. C. Ahlgren ; D. D. Coolbaugh ; N. B. Feilchenfeld
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This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:47 ,  Issue: 2.3 )