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Single-domain model for toggle MRAM

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1 Author(s)
Worledge, D.C. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

An overview is presented of the use of a single-domain model for developing an understanding of the switching of two coupled magnetic free layers for toggle MRAM (magnetic random access memory). The model includes the effects of length, width, thickness, magnetization, thickness asymmetry, intrinsic anisotropy, exchange coupling, dipole coupling, and applied magnetic field. First, a simple perturbative approach is used to understand the basic phenomena at low fields, including the critical switching curve and activation energy. Then the more general model is applied in order to understand the effects of saturation at large field, and thickness asymmetry. The major results are that toggle MRAM should have a larger margin for half-select and full-select switching fields than Stoner–Wohlfarth MRAM, and that the activation energy should increase upon half-select, thus eliminating the half-select activated-error problem.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:50 ,  Issue: 1 )

Date of Publication:

Jan. 2006

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