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Design considerations for MRAM

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9 Author(s)
Maffitt, T.M. ; IBM Systems and Technology Group, 1000 River Street, Essex Junction, Vermont 05452, USA ; DeBrosse, J.K. ; Gabric, J.A. ; Gow, E.T.
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MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:50 ,  Issue: 1 )

Date of Publication:

Jan. 2006

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