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Highly efficient room-temperature tunnel spin injector using CoFe/MgO(001)

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4 Author(s)
Jiang, X. ; IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA ; Wang, R. ; Shelby, R.M. ; Parkin, S.S.P.

Semiconductor spintronics is a promising technology in which the spin states of electrons are utilized as an additional degree of freedom for device operation. One of its prerequisites is the ability to inject spin-polarized electrons into semiconductors. An overview is presented of recent progress in spin injection using an injector based on a crystalline CoFe/MgO(001) tunnel structure. The spin polarization of the electrons that were injected into a GaAs quantum-well light-emitting diode was inferred from electroluminescence polarization from the quantum well. Spin polarizations of 57% at 100 K and 47% at room temperature were obtained. The spin polarization was found to exhibit a strong dependence on bias and temperature, which can be explained on the basis of spin relaxation within the GaAs.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:50 ,  Issue: 1 )