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New simulation methodology for effects of radiation in semiconductor chip structures

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6 Author(s)
Tang, H.H.K. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; Murray, C.E. ; Fiorenza, G. ; Rodbell, K.P.
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New and effective modeling methodologies have been developed to simulate particle transport in arbitrarily complex back-end-of-line (BEOL) topologies of a semiconductor chip. They are applied to address a number of critical problems that involve the single-event-effect analysis of new device structures for 65-nm CMOS (complementary metal-oxide semiconductor) technologies and beyond. These new simulation techniques also provide a generic building block on which a new version of the IBM soft-error Monte Carlo model (SEMM-2) is constructed. In this paper, we review the basic concepts of this development and discuss some important applications.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:52 ,  Issue: 3 )