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Single-event-upset and alpha-particle emission rate measurement techniques

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6 Author(s)
Gordon, M.S. ; IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA ; Rodbell, K.P. ; Heidel, D.F. ; Cabral, C.
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The susceptibility of modern integrated-circuit devices to single-event upsets (SEUs) depends on both the alpha-particle emission rate and the energy of the alpha-particles emitted. In addition, the terrestrial neutron energy and flux, which produce secondary charged fragments in the device and circuit at the location of operation, contribute to the SEU rate. In this paper, we discuss methods that are used to measure alpha-particle emissivity from semiconductor and packaging materials, as well as methods that we used and our results for life testing and accelerated SEU testing of modern devices.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

Published in:

IBM Journal of Research and Development  (Volume:52 ,  Issue: 3 )