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High-intensity terahertz pulses at 1-kHz repetition rate

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5 Author(s)
Budiarto, E. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Margolies, J. ; Jeong, S. ; Son, J.
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We report the generation of terahertz pulses with 0.4-μJ pulse energy at 1-kHz repetition rate using a large-aperture GaAs photoconductor with 3-cm gap aluminum electrodes, biased at voltages up to 45 kV. The terahertz output energy saturates at a laser fluence of 40 μJ/cm2 at low-bias fields, while no clear saturation point was observed at high-bias fields. The output was found to be dependent on the repetition rate: at high fluences, pulse energy at 1 kHz is higher than that at 100 Hz by as much as 60%. A study of the behavior of the terahertz pulse energy and pulsewidth as a function of the pulsewidth of the laser excitation was conducted and compared with theoretical predictions. Propagation properties of the terahertz beam were also characterized, leading to a focal spot size as small as 800 μm at the focus of a 2.5-in focal length parabolic mirror

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Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 10 )