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Optical gain of strained wurtzite GaN quantum-well lasers

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1 Author(s)
Shun Lien Chuang ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

A theory for the electronic band structure and the free-carrier optical gain of wurtzite-strained quantum-well lasers is presented. We take into account the strain-induced band-edge shifts and the realistic band structures of the GaN wurtzite crystals. The effective-mass Hamiltonian, the basis functions, the valence band structures, the interband momentum matrix elements, and the optical gain are presented with analytical expressions and numerical results for GaN-AlGaN strained quantum-well lasers. This theoretical model provides a foundation for investigating the electronic and optical properties of wurtzite-strained quantum-well lasers.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 10 )

Date of Publication:

Oct. 1996

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