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Refractive index of direct bandgap semiconductors near the absorption threshold: influence of excitonic effects

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1 Author(s)
C. Tanguy ; Lab. de Bagneux, CNET, Bagneux, France

A semi-empirical expression for the refractive index, which takes excitonic effects correctly into account, is given for direct bandgap semiconductors in the vicinity of the absorption threshold. This expression, which can be useful even at low temperatures, is compared with previous models and applied to the case of gallium arsenide

Published in:

IEEE Journal of Quantum Electronics  (Volume:32 ,  Issue: 10 )