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Comparison of SiC and Si power semiconductor devices to be used in 2.5 kW DC/DC converter

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2 Author(s)
Hosseini Aghdam, M.G. ; Dept. of Energy & Environ., Chalmers Univ. of Technol., Gothenburg, Sweden ; Thiringer, T.

With the fast development of silicon carbide (SiC) technology, SiC-based power semiconductor devices have started to complete Si components in transportation applications. In this paper, two dc/dc converters for hybrid electric vehicles (HEVs) application are designed and analyzed. The losses, efficiency, junction temperature, and the volume and weight of heat sinks of two converters are calculated for a Si and SiC solution for a 2.5 kW dc/dc converter. A performance comparison of the parameters mentioned above gives that SiC-based technology shows better performances than Si-based power semiconductor devices in the investigated dc/dc converter system. Finally, an economical evaluation shows that the SiC components can cost almost 2.5 times more in order to have the same total cost as for a Si solution for a 15 years operation.

Published in:

Power Electronics and Drive Systems, 2009. PEDS 2009. International Conference on

Date of Conference:

2-5 Nov. 2009