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An n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron Ã Qg over its silicon counterpart.