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A compact X-band balanced frequency doubler on GaAs pHEMT 3D MMIC

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4 Author(s)
Takana Kaho ; NTT Network Innovation Laboratories, NTT Corporation, Yokosuka, Kanagawa, 239-0847, Japan ; Yo Yamaguchi ; Hiroshi Okazaki ; Kazuhiro Uehara

A compact GaAs pHEMT monolithic microwave integrated circuit balanced frequency doubler is presented. It is composed of a common-source/common-gate active balun, a balanced frequency doubler, and a band pass filter. Excellent miniaturization is achieved by using double-and triple-layer stacked inductors and a miniaturized stub as a band-pass filter with a thin-film microstrip line. The chip size is only 0.95 mm × 1.05 mm and power consumption is 63 mW. The measured conversion gain is -4 dB, and the fundamental and 3rd order frequency leakage to the 2nd order harmonic signal are less than -25 dB and -35 dB respectively.

Published in:

Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on

Date of Conference:

Jan. 9 2009-Dec. 11 2009