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Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs

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6 Author(s)
Liqing Lu ; Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA ; Zhiyang Chen ; Bryant, A. ; Hudgins, J.L.
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A compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms.

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Industry Applications, IEEE Transactions on  (Volume:46 ,  Issue: 2 )