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A Novel High-Density Single-Event Upset Hardened Configurable SRAM Applied to FPGA

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5 Author(s)
Lei Wang ; Dept. Design, Beijing Microelectron. Tech. Instn. (BMTI), Beijing, China ; Lei Chen ; Zhiping Wen ; Huabo Sun
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This paper has investigated present radiation hardened FPGA manufacturers and SEU hardened method of configurable SRAM (CSRAM) applied to FPGA. A novel high-density single-event upset hardened CSRAM applied to BQV 300 FPGA is proposed, and this paper uses the mix-mode radiation hardened verification method to simulate the SEU hardened CSRAM. The proposed SEU-hardened CSRAM applied to FPGAs is SEU immune up to 22.49 MeV·cm2/mg, under the angle for incident ion of 0°. But the area of proposed CSRAM only increases 12% than traditional 6-T SRAM, and the area of DICE will increase 69% than proposed CSRAM. Using the proposed CSRAM makes BQV 300 FPGA able to be fabricated. The SEU LETth is much higher than SEU LETth of CSRAM for Xilinx's FPGA.

Published in:

Reconfigurable Computing and FPGAs, 2009. ReConFig '09. International Conference on

Date of Conference:

9-11 Dec. 2009