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The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics

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4 Author(s)
Valin, R. ; Dept. de Electron. e Comput., Univ. de Santiago de Compostela, Santiago de Compostela, Spain ; Seoane, N. ; Aldegunde, M. ; Garcia-Loureiro, A.

The next substitution of the Enabling Grids for E-sciencE project (EGEE) in 2010 by the European Grid Initiative (EGI), where grid infrastructure of each country will be run by National Grid Initiatives (NGI), is giving a boost to the NGI development. In this context, the Spanish National Grid Initiative (es-NGI) is being developed by the e-science Spanish network. The es-NGI is developing virtual organizations where common area applications are associated. In this context, the MOSFET virtual organisation (VO-MOSFET) was born in 2009 to perform semiconductor device simulations using the es-NGI infrastructure. This virtual organization is supported by the es-NGI resource centres and it is developing a job submission and monitoring system independent of the grid middleware. In this paper a general description of the VO-MOSFET and some application level utilities of the job submission system are presented. Furthermore, a gridification example of a nanoelectronic simulation is presented proving the grid benefits for the field of nanoelectronic simulation.

Published in:

e-Science, 2009. e-Science '09. Fifth IEEE International Conference on

Date of Conference:

9-11 Dec. 2009