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Development of (λ∼9.4µm) GaAs-based quantum cascade lasers

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7 Author(s)
Kosiel, K. ; Inst. of Electron Technol., Warsaw, Poland ; Szerling, A. ; Karbownik, P. ; Kubacka-Traczyk, J.
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The development of (λ˜9.4μm) GaAs-based quantum cascade lasers (QCLs) operating over 260 K is reported. The laser design followed an "anticrossed-diagonal" scheme of Page et al.. The QCL GaAs/Al0.45Ga0.55As heterostructures were grown by solid source (SS) MBE. The double trench lasers were fabricated using wet etching and Si3N4 for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses. Optical and electrical properties of resulting devices are presented and discussed.

Published in:

Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop

Date of Conference:

Nov. 3 2009-Oct. 6 2009