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Enhanced Performance of Vertical GaN-Based LEDs With Highly Reflective P -ohmic Contact and Periodic Indium–Zinc–Oxide Nano-Wells

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7 Author(s)
Der-Min Kuo ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Shui-Jinn Wang ; Kai-Ming Uang ; Tron-Min Chen
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Through the use of polystyrene nano-spheres as a 2-D mask for the patterned-deposition of indium-zinc-oxide (IZO) and annealed Pt-Al-Pt as a high reflectivity p -ohmic/mirror layer, vertical GaN-LEDs with atop periodic IZO nano-wells (NW-VLEDs) were fabricated. At 350 mA, NW-VLEDs exhibited a crucial VF reduction of 0.1 V with an enhancement of 87% in light output and 92% in power conversion efficiency as compared to regular vertical GaN-LEDs, which should be attributed to the combination of the effectiveness of high-reflectivity ohmic contact, IZO current spreading layer, and the enhanced light extraction efficiency from the periodic nano-wells.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 5 )