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Effect of pre-cleaning on the formation of low resistance Ni-silicide from atomic layer deposited nickel film

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4 Author(s)
Jong-Bong Ha ; Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea ; Hee-Sung Kang ; Sung-Gil Lee ; Jung-Hee Lee

We present for the first time a detailed study on the effect of various pre-cleaning methods on the formation of the low resistance Ni-silicide from the nickel film deposited by ALD system. Four types of samples were prepared on 6 inch p-type Si (100) wafers.

Published in:

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009