Group-IV heteroepitaxial films for optoelectronic applications

The molecular beam epitaxy (MBE) is a powerful technology for the manufacturing of group-IV heteroepitaxial films with doping concentrations ranging from 10
¹⁴
cm
⁻³
to solubility and thicknesses down to a few monolayers. Combined with a CMOS-compatible (CMOS: Complementary Metal-Oxide-Semiconductor) device technology novel device concepts for highspeed electronics and optoelectronics based on crystalline group-IV-alloys as high speed Ge infrared detectors, Esaki-tunneling diodes, CMOS-compatible Esaki-Tunneling Field-Effect Transistors [1] or Impact-Ionization MOSFETs [2] can be manufactured, tested and studied.