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Group-IV heteroepitaxial films for optoelectronic applications

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4 Author(s)
Oehme, M. ; Inst. of Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany ; Werner, J. ; Kasper, E. ; Schulze, J.

The molecular beam epitaxy (MBE) is a powerful technology for the manufacturing of group-IV heteroepitaxial films with doping concentrations ranging from 1014cm-3 to solubility and thicknesses down to a few monolayers. Combined with a CMOS-compatible (CMOS: complementary metal-oxide-semiconductor) device technology novel device concepts for high-speed electronics and optoelectronics based on crystalline group-IV-alloys as high speed Ge infrared detectors, Esaki-tunneling diodes, CMOS-compatible Esaki-tunneling field-effect transistors or impact-ionization MOSFETs can be manufactured, tested and studied.

Published in:

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009

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