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A device with Si rich gate oxide has attractive characteristics such as visible electroluminescence (EL) and current-voltage (I-V) hysteresis. Consequently, the MOS devices with Si-implanted SiO2 have potentiality to integrate both the EL device and the high density non-volatile memories on a single Si CMOS LSI chip. Though visible EL from Si-implanted MOS capacitors have been reported, EL mechanisms and effects of process conditions still need further studies. In this paper, spectrum analysis of EL from Si-implanted MOS capacitors is presented and effects of Si implantation and annealing conditions are discussed for EL mechanism.