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Nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices with SiGe channel

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6 Author(s)
Chung-Hao Fu ; Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Kuei-Shu Chang-Liao ; Li-Wei Du ; Tien-Ko Wang
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Metal-oxide-semiconductor devices with SiGe channel and nitridation treatment using plasma immersion ion implantation (PIII) were studied in this work. The reliability in terms of stress-induced leakage and stress-induced Vfb shift is improved for device with a PIII treatment. The EOT value of MOS device can be reduced to 9.6 ¿ by employing 30% Ge content in SiGe channel and PIII nitridation.

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Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009

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