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Metal-oxide-semiconductor devices with SiGe channel and nitridation treatment using plasma immersion ion implantation (PIII) were studied in this work. The reliability in terms of stress-induced leakage and stress-induced Vfb shift is improved for device with a PIII treatment. The EOT value of MOS device can be reduced to 9.6 Â¿ by employing 30% Ge content in SiGe channel and PIII nitridation.
Date of Conference: 9-11 Dec. 2009