Cart (Loading....) | Create Account
Close category search window
 

Nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices with SiGe channel

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Chung-Hao Fu ; Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Kuei-Shu Chang-Liao ; Li-Wei Du ; Tien-Ko Wang
more authors

Metal-oxide-semiconductor devices with SiGe channel and nitridation treatment using plasma immersion ion implantation (PIII) were studied in this work. The reliability in terms of stress-induced leakage and stress-induced Vfb shift is improved for device with a PIII treatment. The EOT value of MOS device can be reduced to 9.6 ¿ by employing 30% Ge content in SiGe channel and PIII nitridation.

Published in:

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.