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Recently, the concept of intelligent quantum (IQ) chip introduced by Hasegawa et al. using III-V material as a base material where nanometer scale quantum processors and memories are integrated on chip with capabilities of wireless power supply, wireless communication circuit and various sensing functions, has been demonstrated. Schottky diode is a fast rectifying device and can be used as RF power detector to detect damaging signal as well as rectenna device to supply DC power to the other on-chip devices. This paper investigates the design and fabrication of ultra-low power n-AlGaAs-GaAs high electron mobility transistor Shottky diodes for on-chip RF power detector and rectenna. The Schottky diodes enjoined with coplanar waveguide for applications in on-chip RF detection without insertion of a matching circuit is discussed.