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Nanoscale nonvolatile memory devices with low power operation, high speed, good endurance, highly nonvolatility, and etc. are useful for future memory applications. Resistance random access memory (RRAM) is one of the most promising alternatives for next generation nonvolatile memory applications. High-κ based resistive memories have been reported by several groups. Solid electrolyte based memories are also reported by many groups. In this study, the resistive switching memory in an IrOx/Ta2O5/W structure has been investigated for the first time.