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Silicon nanowire nonvolatile-memory with varying HfO2 charge trapping layer thickness

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8 Author(s)
Zhu, X. ; ECE Dept., George Mason Univ., Fairfax, VA, USA ; Qiliang Li ; Ioannou, D.E. ; Gu, D.
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The authors have fabricated silicon nanowire (SiNW) based Al2O3/HfO2/SiO2 nonvolatile-memory (NVM) cells with varying HfO2 trapping layer thickness have been fabricated by using self-aligning approach. The cells exhibit excellent characteristics such as fast programming/erasing (P/E) speeds, good endurance and excellent retention. The P/E speed is not sensitive to the HfO2 layer thickness. The magnitude of the achievable memory window on the other hand is larger for the cells with thicker HfO2 layers. These results are all in good agreement with the TCAD simulation analysis.

Published in:

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009

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