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Resistive switching mechanisms of High-κ Gd2O3 films in a Cu (IrOx)/Gd2O3/W structure

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3 Author(s)
Das, A. ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan ; Maikap, S. ; Chang, L.B.

Novel nonvolatile resistive switching memory device using Gd203 as solid electrolytes in a Cu and IrOx/Gd203/W structure have been studied for the first time. The switching mechanism with Cu as top electrode is owing to Cu filament formation and Cu filament dissolution. On the other hand the switching with IrOx as top electrode is owing to the oxygen vacancy movement and related barrier height variation.

Published in:

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009