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High-mobility enhancement-mode 4H SiC lateral nMOSFETs with atomic layer deposited Al2O3 gate dielectric

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5 Author(s)
Lichtenwalner, D.J. ; Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA ; Misra, V. ; Dhar, S. ; Ryu, S.-H.
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In this study, MOSFETs were fabricated on CREE Si-face 4H SiC p-type epilayers on ntype substrates. An initial SiC sacrificial oxidation and etch was performed, after which device active areas were formed by implantation and anneal.

Published in:

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009