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Carrier type conversion in carbon nanotube field-effect transistors caused by interface fixed charges

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6 Author(s)
Ohno, Y. ; Dept. of Quantum Eng., Nagoya Univ., Nagoya, Japan ; Moriyama, N. ; Kitamura, T. ; Suzuki, K.
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In this study the effect of deposition of a high-k gate insulator by atomic layer deposition (ALD) technique on electrical characteristics of carbon nanotube field effects transistors (CNFETs) was investigated. Carrier-type conversion was caused by positive fixed-charges at HfO2/SiO2 interface. A technique compatible with Si VLSI technology to control conduction type of CNFETs utilizing interface fixed-charges was proposed.

Published in:

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Date of Conference:

9-11 Dec. 2009

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