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Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

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4 Author(s)
Plissard, S. ; Institut d’Electronique de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, B.P. 60069, 59652 Villeneuve d’Ascq, France ; Coinon, C. ; Androussi, Y. ; Wallart, X.

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The strain relaxation in low mismatched InxAl1-xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained layer.” The threading dislocation density in the top layer is below 106/cm2 and strain is relaxed at the substrate/first layer interface by misfit dislocations. This scheme is a promising method to limit the thickness of buffer layers and obtain fully relaxed pseudosubstrates.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 1 )

Date of Publication:

Jan 2010

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